The sapphire series pressure sensor is composed of sapphire single crystal insulator elements, with strong rigidity and no hysteresis, fatigue, or creep phenomena; Sapphire has excellent elasticity and insulation properties (within 1000 ℃), and is insensitive to temperature changes. Even under high temperature conditions, it has good working characteristics. Sapphire has extremely strong anti radiation properties; Silicon sapphire sensors use silicon epitaxial technology to grow a layer of silicon thin film on sapphire film, and then use photolithography process to generate silicon bridge, and use heavy doping process to generate strain resistance. The silicon bridge grown on sapphire has no p-N nodes, making it insensitive to radiation and unaffected by the upper limit of junction temperature, allowing for the production of higher temperature measurement products. The heavy doping process used can reduce the secondary pollution of silicon bridge under high temperature conditions. Thus, sapphire can be applied to various complex working conditions and environmental situations The sensor has a dual membrane structure, but the membrane structure is composed of a titanium alloy measuring membrane and a receiving membrane. The receiving diaphragm is a sapphire diaphragm welded at high temperature on a titanium alloy diaphragm. The measuring diaphragm and the receiving diaphragm are connected by a metal hard connecting rod, which is welded or laser welded together. The measured pressure is transmitted to the receiving diaphragm. Under the action of pressure, the titanium alloy receiving diaphragm undergoes deformation, which is sensed by the silicon sapphire sensitive element. The output of the bridge will change, and the magnitude of the change is proportional to the measured pressure. The bridge circuit converts the unbalanced signal of the bridge into a voltage signal output.

◆ Wide temperature measurement range

◆ Extremely small temperature error

◆ High precision, high stability

◆ Lightweight and cost-effective